Compound semiconductors for terahertz photonics

被引：0

作者：

Johnston, M. B. ^{[1
]}

Castro-Camus, E. ^{[1
]}

Lloyd-Hughes, J. ^{[1
]}

Merchant, S. K. E. ^{[1
]}

Parkinson, P. ^{[1
]}

Wang, Y. J. ^{[1
]}

Herz, L. M. ^{[1
]}

Fu, L. ^{[2
]}

Gao, Q. ^{[2
]}

Tan, H. H. ^{[2
]}

Jagadish, C. ^{[2
]}

机构：

[1] Univ Oxford, Dept Phys, Clarendon Lab, Parks Rd, Oxford OX1 3PU, England

[2] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2007年

基金：

澳大利亚研究理事会; 英国工程与自然科学研究理事会;

关键词：

D O I：

10.1109/LEOS.2007.4382452

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Terahertz photonics is a rapidly growing field. The ultra-fast dynamics of charge carriers in semiconductors is closely linked to the performance of THz photonic devices. We study a range of ion-implanted and nano-scale semiconductors for application in novel terahertz devices.

引用

页码：409 / +

页数：2

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