Organic light-emitting diodes based on new n-doped electron transport layer

被引：9
|
作者：
Ma, J. W. [1 ]
Xu, Wei [1 ]
Jiang, X. Y. [1 ]
Zhang, Z. L. [1 ,2 ]
机构：
[1] Shanghai Univ, Dept Mat Sci, Shanghai 201800, Peoples R China
[2] Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China
来源：
SYNTHETIC METALS | 2008年 / 158卷 / 21-24期
基金：
中国国家自然科学基金;
关键词：
Organic light-emitting diodes; Doping concentration; Carrier transport; Conductivity;
D O I：
10.1016/j.synthmet.2008.05.009
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Organic light-emitting diodes with 8-hydroxy-quinolinato lithium doped 4'7-diphyenyl-1, 10-phenanthroline as electron transport layer (ETL), and etrafluro-tetracyano-quinodimethane doped 4,4',4 ''-tris(3-methylphenylphenylamono) triphenylamine as hole transport layer (HTL) are demonstrated. The conductivity of carrier transport layers with different doping concentration is examined by hole-only and electron-only devices. Compared with the referenced device (without doping), the current efficiency and power efficiency of the p-i-n device are enhanced by approximately 51% and 89%. respectively. This improvement is attributed to the improved conductivity of the transport layers and the efficient charge balance in the emission zone. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：810 / 814
页数：5
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