A Compact Physical AlGaN/GaN HFET Model

被引:16
|
作者
Hou, Danqiong [1 ]
Bilbro, Griff L. [1 ]
Trew, Robert J. [1 ]
机构
[1] N Carolina State Univ, ECE Dept, Raleigh, NC 27695 USA
关键词
AlGaN/GaN heterojunction field-effect transistor (FET) (HFET) models; HFET compact models; nitride-based HFETs; TRANSISTORS;
D O I
10.1109/TED.2012.2227323
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We introduce a physics-based compact model for AlGaN/GaN heterojunction field-effect transistors (HFETs) that is suitable for both RF microwave and switched-mode power supply (SMPS) applications, so that RF techniques can help determine HFET performance in SMPS applications. Such simulations can predict the on-resistance, slew rate, and breakdown voltage from the physical design of the transistor. Starting from an expression for the drain-source conduction current, charge distribution and displacement current are determined. The new model was implemented in Verilog-A and implemented in AWRDE, the design environment from Applied Wave Research. The HFET model was validated by comparison with Silvaco simulations and with data from an AlGaN/GaN HFET S-band amplifier. The new model accurately predicts device performance for dc, small-signal, and large-signal operations.
引用
收藏
页码:639 / 645
页数:7
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