Hydrogen etching effects during plasma doping processes and impact on shallow junction formation

被引：0
|
作者：
Qin, S [1 ]
Bernstein, JD [1 ]
Chan, C [1 ]
机构：
[1] NORTHEASTERN UNIV,DEPT ELECT & COMP ENGN,PLASMA SCI & MICROELECTR RES LAB,BOSTON,MA 02115
来源：
ION-SOLID INTERACTIONS FOR MATERIALS MODIFICATION AND PROCESSING | 1996年 / 396卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：509 / 514
页数：6
相关论文
共 50 条
  • [21] Study on the Effect of RTA Ambient to Shallow N plus /P Junction Formation using PH3 Plasma Doping
    Do, Seung-woo
    Song, Byung-Ho
    Jung, Ho
    Kong, Seong-Ho
    Oh, Jae-Geun
    Lee, Jin-Ku
    Ju, Min-Ae
    Leon, Seung-Joon
    Ku, Ja-Chun
    Lee, Yong-Hyun
    DOPING ENGINEERING FOR FRONT-END PROCESSING, 2008, 1070 : 123 - +
  • [22] Ultra-shallow Junction Formation Using Plasma Doping and Excimer Laser Annealing for Nano-technology CMOS Applications
    Do, Seung-Woo
    Kong, Seong Ho
    Lee, Yong-Hyun
    Oh, Jae-Geun
    Lee, Jin-Ku
    Ju, Min-Ae
    Jeon, Seung-Joon
    Ku, Ja-Chun
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 55 (03) : 1065 - 1069
  • [23] Formation of Ultra-Shallow Junctions by Advanced Plasma Doping Techniques
    Papasouliotis, G. D.
    Godet, L.
    Singh, V.
    Miura, R.
    Ito, H.
    ION IMPLANTATION TECHNOLOGY 2010, 2010, 1321 : 146 - 149
  • [24] Ultra-shallow junction formation using flash annealing and advanced doping techniques
    Gelpey, J.
    McCoy, S.
    Kontos, A.
    Godet, L.
    Hatem, C.
    Camm, D.
    Chan, J.
    Papasouliotis, G.
    Scheuer, J.
    EXTENDED ABSTRACTS 2008 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY, 2008, : 82 - 86
  • [25] Impact of junction formation processes on single molecular conductance
    Isshiki, Y.
    Fujii, S.
    Nishino, T.
    Kiguchi, M.
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2018, 20 (12) : 7947 - 7952
  • [26] Competing Effects of Doping and Trap Formation in Polymer Semiconductors During Plasma Treatment
    Yu, Hongquan
    Tang, Zhenyuan
    Tu, Min
    Wu, Yangjiang
    Zhang, Kaihuan
    IEEE ELECTRON DEVICE LETTERS, 2024, 45 (12) : 2506 - 2509
  • [27] Nonthermal illumination effects on ultra-shallow junction formation
    Vaidyanathan, Ramakrishnan
    Felch, Susan
    Graoui, Houda
    Foad, Majeed A.
    Kondratenko, Yevgeniy
    Seebauer, Edmund G.
    APPLIED PHYSICS LETTERS, 2011, 98 (19)
  • [28] Hydrogen effect on ultra-shallow arsenic n+/p junction formed by AsH3 plasma doping (PLAD)
    Heo, S
    Baek, S
    Lee, D
    Buh, G
    Sin, Y
    Hwang, H
    Fifth International Workshop on Junction Technology, 2005, : 65 - 66
  • [29] Etching effects of hydrogen plasma treatment on diamond surfaces
    Jiang, He
    Liu, Fengbin
    Yan, Hongjuan
    Si, Lina
    Dou, Zhaoliang
    SURFACE & COATINGS TECHNOLOGY, 2019, 363 : 12 - 17
  • [30] Ultra-Shallow Junction Formation on 3D Silicon and Germanium Device Structures by Ion Energy Decoupled Plasma Doping
    Kim, Y. S.
    Kown, Hyukjun
    2017 17TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT), 2017, : 62 - 65
12345