共 50 条
- [2] Process effects in shallow junction formation by plasma doping JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (01): : 435 - 439
- [3] Simulation on plasma doping for shallow junction formation EXTENDED ABSTRACTS 2008 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY, 2008, : 14 - 19
- [4] Ultra-Shallow Junction Formation by Plasma doping and Excimer Laser Annealing ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 5: NEW MATERIALS, PROCESSES, AND EQUIPMENT, 2009, 19 (01): : 87 - +
- [5] Plasma doping and subsequent rapid thermal processing for ultra shallow junction formation 13TH IEEE INTERNATIONAL CONFERENCE ON ADVANCED THERMAL PROCESSING OF SEMICONDUCTORS - RTP 2005, 2005, : 45 - 51
- [6] N+ shallow junction formation using plasma doping and rapid thermal annealing 2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2, 2007, : 248 - +
- [7] Plasma doping (PD) for ultra-shallow junction EXTENDED ABSTRACTS 2008 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY, 2008, : 20 - 24
- [9] Shallow n+/p junction formation using PH3 plasma doping technique MICROPROCESSES AND NANOTECHNOLOGY 2007, DIGEST OF PAPERS, 2007, : 186 - 187
- [10] Shallow junction formation by plasma immersion ion implantation SURFACE & COATINGS TECHNOLOGY, 1997, 93 (2-3): : 254 - 257