Performance optimization of solar cells using non-polar, semi-polar and polar InGaN/GaN multiple quantum wells alongside AlGaN blocking layers

This paper reports opto-electronic properties and photo-voltaic performances of non-polar, semi-polar and polar solar cells employing InGaN/GaN multiple quantum wells (MQWs) with and without using AlGaN material as electron and hole blocking layers. In addition, the investigation is conducted for a number of QWs, e. g., 3, 5, 7, and 10. The performance of such devices is evaluated in terms of current density-voltage characteristics, power-voltage characteristics, fill factor, and power conversion efficiency. Our TCAD simulation results show that the InGaN/GaN solar cell featuring non-polar crystal structure, seven QWs alongside AlGaN blocking layers turns out to be the optimised device exhibiting open circuit voltage (V-oc) of 1.08 V, short circuit current density (J(sc)) of - 7.64 mA/cm(2)and power conversion efficiency (eta) of 5.36% among all other solar cells. The optimized device exhibits a considerably high value of eta compared to earlier findings of nitride based solar cells. Hence our present design for InGaN/GaN MQW solar cells could provide an encouraging guideline for design and development of solar cells utilizing III-V nitride semiconductors in near future.