Theory and Design Optimization of Energy-Efficient Hydrophobic Wafer-bonded III-V/Si Hybrid Semiconductor Optical Amplifiers

被引：9
|
作者：
Cheung, Stanley [1 ]
Kawakita, Yasumasa [1 ]
Shang, Kuanping [1 ]
Ben Yoo, S. J. [1 ]
机构：
[1] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 2013年 / 31卷 / 24期
关键词：
Data centers; integrated optical devices; optical amplifiers; optical interconnects; HIGH-POWER; SILICON; INP; SI;
D O I：
10.1109/JLT.2013.2284287
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper discusses optimum design strategies for high-efficiency hybrid semiconductor optical amplifiers (SOA). A comprehensive model is presented to determine the width, composition, and number of quantum wells for a hydrophobic bonded SOA with Ins-x-y)Ga(x)Al(y) As quantum-wells (QW). Optimizing the interfacial bonding layer, III-V wafer stack design, straight hybrid amplifier dimensions and flared amplifier configurations leads to a design for up to 35% wall-plug efficiency at 2 mW input and 10 dB gain. Likewise, optimized dimensions also lead to 15% wall-plug efficiency (WPE) at 0.1 mW input and 10 dB gain. Thermal effects due to the effect of the buried oxide layer (BOX) is presented and methods of improved thermal extraction is discussed.
引用
收藏
页码：4057 / 4066
页数：10
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