Middle Cell Development for Wafer-Bonded III-V//Si Tandem Solar Cells

被引:2
|
作者
Schygulla, Patrick [1 ]
Heinz, Friedemann D. [2 ]
Dimroth, Frank [1 ]
Lackner, David [1 ]
机构
[1] Fraunhofer Inst Solar Energy Syst ISE, D-79110 Freiburg, Germany
[2] Univ Freiburg INATECH, D-79108 Freiburg, Germany
来源
IEEE JOURNAL OF PHOTOVOLTAICS | 2021年 / 11卷 / 05期
关键词
Photonic band gap; Photovoltaic cells; Temperature measurement; Computer architecture; Microprocessors; Epitaxial growth; Voltage measurement; AlGaAs; GaInAsP; III-V; Si; metalorganic vapor phase epitaxy (MOVPE); multijunction solar cells; CRYSTALLINE SILICON; REASSESSMENT; EFFICIENCY; LIMIT;
D O I
10.1109/JPHOTOV.2021.3090159
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
This article focuses on the material properties of two III-V semiconductors, AlGaAs and GaInAsP, and their usage as middle cell absorber materials in a wafer-bonded III-V//Si triple-junction solar cell. To this end single-junction solar cells were grown epitaxially lattice matched on GaAs wafers using metalorganic vapor phase epitaxy. By optimizing the growth temperature and the V/III ratio we could increase the open-circuit voltage at a target absorber band gap of 1.50 eV by up to 100 mV. In the future these results will be implemented into two-terminal III-V//Si triple-junction solar cells to increase the conversion efficiency beyond 35% under the AM1.5g solar spectrum.
引用
收藏
页码:1264 / 1270
页数:7
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