SIMS Sample Preparation Method for GOX Analysis with Small-Size Polysilicon Patterns

被引：0

作者：

Zhu, Lei ^{[1
]}

Teo, H. W. ^{[1
]}

Lee, M. T. ^{[1
]}

Ng, H. P. ^{[1
]}

Chen, C. Q. ^{[1
]}

Ang, G. B. ^{[1
]}

Hua, Y. N. ^{[1
]}

Zhao, S. P. ^{[1
]}

Redkar, S. ^{[1
]}

机构：

[1] GLOBALFOUNDRIES Singapore Pte Ltd, QCE FA Dept, Singapore 738406, Singapore

来源：

PROCEEDINGS OF THE 2013 20TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2013) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Conventional die soak in hydrofluoric acid (HF) to prepare SIMS sample for gate oxide depth profiling analysis works well for large-size poly-Si pattern. However, for small-size poly-Si pattern (< 50 mu m), the HF soak results in abnormality in the SIMS depth profiling. A mechanical polish combined with HF soak was proposed to solve the problem.

引用

页码：478 / 480

页数：3

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