Freestanding 3C-SiC grown by sublimation epitaxy using 3C-SiC templates on silicon

被引：1

作者：

Hens, P. ^{[1
,2
]}

Mueller, J. ^{[3
]}

Wagner, G. ^{[4
]}

Liljedahl, R. ^{[1
]}

Yakimova, R. ^{[1
]}

Spiecker, E. ^{[3
]}

Wellmann, P. ^{[2
]}

Syvajarvi, M. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

[2] Univ Erlangen Nurnberg, Mat Elect & Energy Technol, D-91058 Erlangen, Germany

[3] Univ Erlangen Nurnberg, Ctr Nanoanal & Electron Microscopy, D-91058 Erlangen, Germany

[4] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷

关键词：

cubic silicon carbide; heteroepitaxy; sublimation growth; defect reduction; FILMS;

D O I：

10.4028/www.scientific.net/MSF.717-720.177

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work a new approach for the production of freestanding cubic silicon carbide (3C-SiC) in (001) orientation is presented which is based on the combination of chemical vapor deposition (CVD) and the fast sublimation growth process (FSGP). Fast homoepitaxial growth of 3C-SiC using sublimation epitaxy on a template created by CVD growth on silicon substrates allows to obtain thick freestanding material with low defect densities. Using standard silicon wafers as substrate material permits a cost efficient process and the applying of wafers with different orientations. The (001) orientation used in this work will potentially allow further heteroepitaxial growth of other cubic semiconductors, like e.g. gallium nitride (GaN).

引用

页码：177 / +

页数：2

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