Parametric Measurements of switching Losses of IGBT's in Pulsed Power Applications

被引:0
|
作者
Strowitzki, Claus [1 ]
Dahlke, Matthias [1 ]
机构
[1] MLase AG, D-82110 Germering, Germany
关键词
IGBT; switching losses; turn on losses;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
IGBT's are the work horse in Power Electronics. Due to improvements of the IGBTs they find also many applications in the field of Pulsed power. The switching losses of an IGBT are normally given from the supplier, but for typical converter applications. These data are not valid for Pulsed Power applications. In this paper parametric measurements of turn on losses are shown for IGBTs in a typical pulsed power application.
引用
收藏
页码:324 / 327
页数:4
相关论文
共 50 条
  • [21] PULSE SWITCHING CHARACTERISTICS OF MAGTS FOR PULSED-POWER APPLICATIONS
    ENDO, F
    ATSUMI, K
    OKAMURA, K
    WATANABE, Y
    KANEKO, E
    OHSHIMA, I
    ELECTRICAL ENGINEERING IN JAPAN, 1994, 114 (05) : 108 - 118
  • [22] A Novel Digital Active Gate Driver For High-Power IGBT To Reduce Switching Losses And Stresses
    Ling, Yatao
    Zhao, Zhengming
    Zhu, Yicheng
    2019 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2019, : 4189 - 4194
  • [23] Passive Snubber for Reducing Switching-Power Losses of an IGBT in a DC-DC Boost Converter
    Choe, Hyung-Jin
    Chung, Yoo-Chae
    Sung, Chang-Hyeon
    Yun, Jae-Jung
    Kang, Bongkoo
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2014, 29 (12) : 6332 - 6341
  • [24] Comparison of modeling switching losses of an IGBT based on the datasheet and an experimentation
    Oustad, Dounia
    Lefebvre, Stephane
    Petit, Mickael
    Lhotellier, Dominique
    Ameziani, Menouar
    2016 18TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'16 ECCE EUROPE), 2016,
  • [25] Simple Methods to Calculate IGBT and Diode Conduction and Switching Losses
    Feix, Gudrun
    Dieckerhoff, Sibylle
    Allmeling, Jost
    Schoenberger, John
    EPE: 2009 13TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-9, 2009, : 1968 - +
  • [26] Integrated GaN Power Switches for Pulsed PAs and Switching Power Conversion Applications
    Pereira, Aaron T.
    Weste, Neil H. E.
    Abbott, Derek
    Al-Sarawi, Said F.
    2020 IEEE AEROSPACE CONFERENCE (AEROCONF 2020), 2020,
  • [27] The Bi-IGBT: a low losses power structure by IGBT parallel association
    Caramel, C.
    De Maglie, R.
    Austin, P.
    Sanchez, J. L.
    Le Gal, J.
    Imbernon, E.
    Laur, J. P.
    Flores, D.
    Hidalgo, S.
    Millan, J.
    Rebollo, J.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (05)
  • [28] Accurate Estimation of Switching Losses in SiC Power MOSFET's
    Arribas, A. Pozo
    Krishnamurthy, M.
    Shenai, K.
    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 4, 2014, 64 (07): : 283 - 287
  • [29] Switching Characteristics of Power Semiconducter Device, IGBT
    Kawamura, T.
    Okada, T.
    Denki Gakkai Ronbunshi. D, Sangyo Oyo Bumonshi, 116 (02):
  • [30] Calculation of IGBT Power Losses and JunctionTemperature in inverter drive
    Bouzida, Ahcene
    Abdelli, Radia
    Ouadah, M'hamed
    PROCEEDINGS OF 2016 8TH INTERNATIONAL CONFERENCE ON MODELLING, IDENTIFICATION & CONTROL (ICMIC 2016), 2016, : 768 - 773