Recombination Dynamics in Quantum Dot Semiconductor Saturable Absorber Mirrors (QD-SESAMs)

被引：0
|
作者：
Maas, D. J. H. C. [1 ]
Bellancourt, A. -R. [1 ]
Hoffmann, M. [1 ]
Rudin, B. [1 ]
Golling, M. [1 ]
Suedmeyer, T. [1 ]
Keller, U. [1 ]
机构：
[1] ETH, Inst Quantum Elect, Dept Phys, CH-8093 Zurich, Switzerland
来源：
2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 | 2008年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the first systematic study of recombination dynamics in InAs QD-SESAMs. Decreasing growth temperature and increasing indium coverage reduces the recovery time from 1500 to 24 ps, leading to shorter pulses in modelocked VECSELs. (C) 2008 Optical Society of America
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页码：262 / 263
页数：2
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