Electronic Properties of Sulfur Covered Ru(0001) Surfaces

被引:1
|
作者
Pisarra, Michele [1 ]
Diaz, Cristina [1 ,2 ,3 ]
Bernardo-Gavito, Ramon [4 ,5 ,6 ]
Jesus Navarro, Juan [4 ,5 ]
Black, Andres [4 ,5 ]
Calleja, Fabian [5 ]
Granados, Daniel [5 ]
Miranda, Rodolfo [2 ,4 ,5 ]
Vazquez de Parga, Amadeo L. [2 ,4 ,5 ]
Martin, Fernando [1 ,2 ,5 ]
机构
[1] Univ Autonoma Madrid, Dept Quim, Modulo 13, E-28049 Madrid, Spain
[2] Univ Autonoma Madrid, Condensed Matter Phys Ctr IFIMAC, E-28049 Madrid, Spain
[3] Univ Autonoma Madrid, Inst Adv Res Chem Sci IAdChem, E-28049 Madrid, Spain
[4] Univ Autonoma Madrid, Dept Fis Mat Condensada, Modulo 3, E-28049 Madrid, Spain
[5] Inst Madrileno Estudios Avanzados Nanociencia IMD, Madrid 28049, Spain
[6] Univ Lancaster, Phys Dept, Lancaster LA1 4YB, England
来源
JOURNAL OF PHYSICAL CHEMISTRY A | 2018年 / 122卷 / 08期
关键词
AUGMENTED-WAVE METHOD; PHASE-TRANSITIONS; SUPERATOM STATES; METAL-SURFACES; LAYERS; ADSORPTION; S/RU(0001); NANOTUBES; GRAPHITE; GRAPHENE;
D O I
10.1021/acs.jpca.7b11586
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The structural properties of sulfur superstructures adsorbed on Ru(0001) have been widely studied in the past. However, much less effort has been devoted to determine their electronic properties. To understand the connection between structural and electronic properties, we have carried out density functional theory periodic boundary calculations mimicking the four long-range ordered sulfur superstructures identified experimentally by means of scanning tunneling microscopy (STM) techniques. Our simulations allow us to characterize the nature of the sulfur-Ru bond, the charge transfer between the Ru substrate and the sulfur adlayers, the interface states, and a parabolic state recently identified in STM experiments. A simple analysis, based on a one-dimensional model, reveals that this parabolic state is related to a potential well state, formed in the surface when the concentration of sulfur atoms is large enough to generate a new minimum in the surface potential.
引用
收藏
页码:2232 / 2240
页数:9
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