Effect of annealing for CuInS2 thin films prepared from Cu-rich ternary compound

被引：13
|
作者：
Akaki, Yoji [1 ]
Nakamura, Shigeuki [2 ]
Nomoto, Keita [3 ]
Yoshitake, Tsuyoshi [3 ]
Yoshino, Kenji [4 ]
机构：
[1] Miyakonojo Natl Coll Technol, Dept Elect & Comp Engn, 473-1 Yoshio, Miyazaki 8858567, Japan
[2] Tsuyama Natl Coll Technol, Dept Elect & Elect Engn, Okayama 7088509, Japan
[3] Kyushu Univ, Dept Appl Sci Elect & Mat, Fukuoka 8168580, Japan
[4] Miyazaki Univ, Dept Elect & Elect Engn, Miyazaki 8892192, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 5 | 2009年 / 6卷 / 05期
关键词：
VACUUM EVAPORATION METHOD;
D O I：
10.1002/pssc.200881211
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Evaporated CuInS2 films using a single-source were annealed in H2S atmosphere from 250 to 500 degrees C for 60 min. after the evaporation. Polycrystalline CuInS2 powder grown by a hot-press method was employed as a source material, Cu/In ratios of the source were 1.0, 1.2 and 1.5 All the films annelated above 350 degrees C were of CuInS2 single phase regardless of the Cu/In ratio of the source material. The films prepared from the source material of the Cu/In ratio of 1.5 became Cu-rich films, which had the Cu/In ratio of 1.37. Carrier connectrations, resistivities and mobilities of the films annelated above 350 degrees C prepared from the source material of the Cu/In ratio of 1.5 were approximately 1x10(21) cm-3, 0.1 Omega cm and 0.1 cm(2)/Vs, respectively, at room temperature. The activation energy of the films annelated at 400 degrees C was evaluated to be 6.5 meV. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页码：1030 / +
页数：2
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