InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates

被引：6

作者：

Zervos, M. ^{[1
]}

Xenogianni, C. ^{[1
,2
]}

Deligeorgis, G. ^{[1
]}

Androulidaki, M. ^{[1
]}

Savvidis, P. G. ^{[1
,2
]}

Hatzopoulos, Z. ^{[1
,2
,3
]}

Pelekanos, N. T. ^{[1
]}

机构：

[1] FORTH, IESL, Microelect Res Grp, POB 1527, GR-71110 Iraklion, Crete, Greece

[2] Univ Crete, Dept Mat Sci & Technol, Iraklion 71003, Greece

[3] Univ Crete, Dept Phys, Iraklion 71003, Greece

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 11 | 2006年 / 3卷 / 11期

关键词：

D O I：

10.1002/pssc.200671616

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

InAs nanostructures were grown by molecular beam epitaxy on GaAs (211)B at temperatures between 400-530 degrees C and growth rates that were varied between 0.1 to 0.02 mono-layers (ML) per second. For temperatures up to 500 degrees C we obtain pyramidal-shaped InAs quantum dots with average heights between 3 and 7 nm while at 530 degrees C the dots become elongated, higher and are self organized into dashes along a specific crystallographic direction. Photoluminescence (PL) spectra taken at 18 K reveal in the QD samples grown at 500 degrees C a broad (55 meV FWHM) PL peak at 1.27 eV, associated with the QD layer. The PL peak blue shifts noticeably (similar to 7 meV) upon increasing power of excitation, as a consequence of the strain induced electric field that exists in the (211)B direction. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3988 / +

页数：2

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