共 50 条
- [34] PHYSICAL PROPERTIES OF CeCu2Si2: PHASE DIAGRAM EFFECTS. Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1985, 135 (1-3): : 72 - 75
- [36] Diffusion of phosphorus in relaxed Si1-xGex films and strained Si/Si1-xGex heterostructures Christensen, J.S. (jens@imit.kth.se), 1600, American Institute of Physics Inc. (94):
- [37] 2 MeV Si ion implantation damage in relaxed Si1-xGex NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 120 (1-4): : 165 - 168
- [38] 2 MeV Si ion implantation damage in relaxed Si1-xGex Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1996, 120 (1-4): : 165 - 168