共 50 条
- [31] SINGULARITIES OF CROSS MAGNETORESISTANCE OF CDXHG1-XTE (X=0.17-0.19) IN WEAK MAGNETIC-FIELDS UKRAINSKII FIZICHESKII ZHURNAL, 1984, 29 (02): : 294 - 297
- [32] INFLUENCE OF ANNEALING UNDER AN ANODIC OXIDE ON CHANGES IN THE COMPOSITION OF THE SURFACE AND CONVERSION OF THE TYPE OF CONDUCTION OF P-TYPE CDXHG1-XTE(X-APPROXIMATE-TO-0.2) SINGLE-CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (02): : 175 - 179
- [33] ELECTRON SPECIFIC-HEAT OF CDXHG1-XTE NEAR A METAL-INSULATOR-TRANSITION IN A MAGNETIC-FIELD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (06): : 678 - 681
- [35] NATURE OF A MAGNETIC-FIELD-INDUCED METAL-INSULATOR TRANSITION IN N-TYPE CDXHG1-XTE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (05): : 566 - 568
- [36] QUANTIZED MAGNETIC-FIELD EFFECT ON ELECTRON-GAS DEGENERACY DEGREE AND KINETIC EFFECTS IN CDXHG1-XTE FIZIKA TVERDOGO TELA, 1984, 26 (08): : 2289 - 2292
- [38] GROWTH OF HOMOGENOUS MIXED-CRYSTALS WITH A LARGE SEGREGATION TENDENCY USING BRIDGMAN METHOD - PSEUDOBINARY SYSTEM CDXHG1-XTE KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1978, 13 (06): : 639 - 643
- [40] CHARACTERISTIC FEATURES OF MAGNETIC-FIELD DEPENDENCES OF THE TRANSPORT-COEFFICIENTS OF 2-LAYER CDXHG1-XTE STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (03): : 302 - 304