Modeling of Crosstalk Effects in Carbon Nanotube Based Differential Through-Silicon Via Array

被引：0
|
作者：
Pan, Jin-Wei [1 ]
Fu, Kai [1 ]
Cheng, Zi-Han [1 ]
Zhao, Wen-Sheng [1 ]
Wang, Gaofeng [1 ]
机构：
[1] Hangzhou Dianzi Univ, Sch Elect & Informat, Key Lab RF Circuits & Syst, Minist Educ, Hangzhou 310018, Zhejiang, Peoples R China
来源：
2017 IEEE ELECTRICAL DESIGN OF ADVANCED PACKAGING AND SYSTEMS SYMPOSIUM (EDAPS) | 2017年
基金：
中国国家自然科学基金;
关键词：
Crosstalk; differential through silicon vias (D-TSVs); equivalent circuit model;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The equivalent circuit model of multiple differential through-silicon vias (D-TSVs) based on carbon nanotube (CNT) is presented in this paper. The model is validated against the full-wave electromagnetic simulator HFSS. By virtue of the circuit model, the crosstalk between CNT-based D-TSVs is evaluated and compared.
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页数：3
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