Properties of InSb layers doped with Ag and Au

被引：0
|
作者：
Pashkova, ON
Sanygin, VP
Steblevskii, AV
Totrova, GA
Padalko, AG
机构：
[1] Russian Acad Sci, NS Kurnakov Gen & Inorgan Chem Inst, Moscow 117907, Russia
[2] Russian Acad Sci, Inst Phys Chem Ceram, Moscow 119361, Russia
来源：
INORGANIC MATERIALS | 1999年 / 35卷 / 04期
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
InSb layers doped with Ag and Au were grown by directional solidification. The effective segregation coefficients of Au and Ag in InSb measured on samples grown at a rate of 2 cm/h were found to be 3.1 x 10(-2) and 1.2 x 10(-3), respectively. The electrical properties of the layers and the effective lifetime of photogenerated carriers were measured at 77 and 300 K. The effective lifetime is correlated with the specific surface area of the samples.
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页码：318 / 321
页数：4
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