Model of linewidth for laser writing on a photoresist

被引:10
|
作者
Salgueiro, JR [1 ]
Moreno, V [1 ]
Liñares, J [1 ]
机构
[1] Univ Santiago de Compostela, Dept Fis Aplicada, Escla Univ Opt, E-15782 Santiago De Compostela, Spain
关键词
D O I
10.1364/AO.41.000895
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We present a theoretical model to describe the feature size produced by direct laser writing upon a photoresist relative to various experimental parameters. The model allows the number of parameters required for describing the linewidth to be reduced and shows how the description can be made in terms of the ratio of laser power to writing velocity. Both of the limiting cases of the truncation of the laser beam are analyzed; i.e., the case of a nontruncated (Gaussian) beam and the case of a strongly truncated beam (simplified with uniform illumination assumed). Experimental measurements are presented that are fitted to the model to permit its validity to be assessed and for a comparison of these two regimes, which are shown to be different. (C) 2002 Optical Society of America.
引用
收藏
页码:895 / 901
页数:7
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