Features of photoinduced dynamic gratings in semiconductors

被引：2
|
作者：
Grigor'ev, A. M. [1 ]
机构：
[1] Laser Technol Ctr, St Petersburg 195251, Russia
来源：
QUANTUM ELECTRONICS | 2008年 / 38卷 / 07期
关键词：
laser; dynamic grating; semiconductor;
D O I：
10.1070/QE2008v038n07ABEH013692
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The problem of influence of the diffusion process of nonequilibrium carriers on the efficiency of the dynamic grating photoinduced in a semiconductor material is studied theoretically and experimentally. An analytic expression is derived, which allows one to estimate the outlooks for applications of different semiconductor materials as active media for writing dynamic gratings.
引用
收藏
页码：685 / 688
页数：4
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