Epitaxial growth of conductive LaNiO3 thin films by pulsed laser ablation

被引：51
|
作者：
Yu, T
Chen, YF
Liu, ZG
Chen, XY
Sun, L
Ming, NB
Shi, LJ
机构：
[1] CTR ADV STUDIES SCI & TECHNOL MICROSTRUCT,NANJING 210093,PEOPLES R CHINA
[2] NANJING UNIV SCI & TECHNOL,DEPT MAT SCI & TECHNOL,NANJING 210014,PEOPLES R CHINA
来源：
MATERIALS LETTERS | 1996年 / 26卷 / 1-2期
关键词：
lanthanum nickel oxide; LaNiO3; perovskite; thin film laser ablation; metallic; ohmic contacts; SnTiO3; LaAlO3; substrates;
D O I：
10.1016/0167-577X(95)00199-9
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Epitaxial LaNiO3 (LNO) thin films have been fabricated on (001)SrTiO3 and (001)LaAlO3 single crystal substrates by pulsed laser ablation at 30 Pa oxygen partial pressure and 700 degrees C substrate temperature. X-ray theta-2 theta scan, X-ray Phi scan, Rutherford backscattering (RBS) channeling and electron probe technique were used to characterize the as-deposited LNO thin films. The surface of the epitaxial LNO thin film was analyzed by X-ray photoelectron spectroscopy (XPS). Down to 80 K, the epitaxial LNO thin film showed good metallic behavior and its resistivity was 2.5 X 10(-6) Omega m at 300 K.
引用
收藏
页码：73 / 76
页数：4
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