Effects of spectral broadening and cross relaxation on the gain saturation characteristics of quantum dot laser amplifiers

被引:20
|
作者
Nambu, Y
Tomita, A
Saito, H
Nishi, K
机构
[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan
[2] NEC Corp Ltd, Optoelect Res Labs, Tsukuba, Ibaraki 3058501, Japan
[3] NEC Corp Ltd, High Frequency Device Res Labs, Tsukuba, Ibaraki 3058501, Japan
关键词
quantum dot; inhomogeneous broadening; gain; saturation; cross relaxation; wave-mixing; laser; amplifier; carrier distribution; InGaAs;
D O I
10.1143/JJAP.38.5087
中图分类号
O59 [应用物理学];
学科分类号
摘要
Spectral broadening and cross relaxation of an aggregate of highly carrier-injected quantum dots have been studied experimentally by evaluating the gain saturation and optical-wave mixing characteristics of traveling-wave laser amplifiers that include self-assembled 0.98-mu m InGaAs dots. Measured signal-gain spectra at room temperature showed that the gain decreases over the entire gain spectra when an intense and narrow-linewidth saturating signal is injected at a higher-order subband transition of the quantum dot. Differential-gain spectrum was calculated from the saturated and unsaturated signal gain spectra, and revealed asymmetric gain saturation with respect to the wavelength of the saturating signal. These results suggest that cross relaxation is so fast that the dot aggregate has a homogeneously broadened gain spectrum. Self-saturation and cross-saturation characteristics, and the detuning characteristics of highly nondegenerate four-wave mixing were also investigated. The latter revealed that the characteristic times of two cross-relaxation processes are about 1 ps and 100 fs.
引用
收藏
页码:5087 / 5095
页数:9
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