Characteristics of cross-gain (XG) wavelength conversion in quantum dot semiconductor optical amplifiers

被引：51
|
作者：
Qasaimeh, O [1 ]
机构：
[1] Jordan Univ Sci & Technol, Dept Elect Engn, Irbid 22110, Jordan
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 02期
关键词：
cross gain (XG); quantum dot (QD) amplifiers; wavelength conversion;
D O I：
10.1109/LPT.2003.821047
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Detailed theoretical analysis of cross-gain,(XG) wavelength conversion in quantum dot semiconductor optical amplifier (QD-SOA) is presented. The model takes into account the effect of the excited states, the wetting layer (WL) and the nonlinear, optical gain of the dots. An analytical model of the small-signal XG conversion efficiency is also derived. The XG efficiency shows strong dependence on the escape and relaxation lifetimes between the ground and excited states. The model/analysis provides insight on the escape/relaxation lifetime of QD lasers which is very important for characterizing and understanding the performance characteristics of QD devices.
引用
收藏
页码：542 / 544
页数：3
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