20nm gate bulk-FinFET SONOS flash

被引：0

作者：

Hwang, JR ^{[1
]}

Lee, TL ^{[1
]}

Ma, HC ^{[1
]}

Lee, TC ^{[1
]}

Chung, TH ^{[1
]}

Chang, CY ^{[1
]}

Liu, SD ^{[1
]}

Perng, BC ^{[1
]}

Hsu, JW ^{[1
]}

Lee, MY ^{[1
]}

Ting, CY ^{[1
]}

Huang, CC ^{[1
]}

Wang, JH ^{[1
]}

Shieh, JH ^{[1
]}

Yang, FL ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co, Hsinchu, Taiwan

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST | 2005年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

High-performance FinFET SONOS (silicon-oxide-nitride-oxide-silicon) flash cells with gate length down to 20nm have been fabricated and operated successfully on bulk-silicon substrate for the first time. A program/erase window of 2V has been achieved with high P/E speed (T-P = 10 mu s and T-E = 1ms), and a 1.5V window remained after 10 years at room temperature. Multi-level storage is also obtained with Delta V-t > 4V and T-P,T-E = 1ms. Operation voltages are not more than 7V in the two applications. Gate disturb issues are alleviated by applying an appropriate bias on unselected bit lines.

引用

页码：161 / 164

页数：4

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