Improved ferroelectric property of LaNiO3/Pb(Zr0.2Ti0.8)O3/LaNiO3 capacitors prepared by chemical solution deposition on platinized silicon -: art. no. 092902

We report a technique to prepare top and bottom oxide electrodes of LaNiO3 (LNO) for lead zirconate titanate (PZT) films using a chemical solution deposition. LNO/PZT/LNO sandwich structures were prepared on platinized silicon by spin coating combined with rapid thermal annealing. Pt dots were sputtered on top of LaNiO3 film to serve as protective masks during etching of the uncovered LaNiO3 layer using dilute hydrochloric acid. For comparison, Pt/PZT/Pt capacitors were also prepared using the same processing conditions. Electrical measurements were carried out on both Pt/LNO/PZT/LNO/Pt and Pt/PZT/Pt structures. The remnant polarizations and coercive fields for these two capacitors are 17.4 and 21.4 mu C/cm(2), 71 and 81.5 kV/cm respectively at 5 V. The leakage current density for the Pt/LNO/PZT/LNO/Pt structure is about 1.38x10(-6) A/cm(2) at 5 V, which is lower than that of PZT deposited on Pt electrode. After 10(9) bipolar switching cycles, no significant change in remnant polarization was observed in the Pt/LNO/PZT/LNO/Pt capacitor, in comparison to the Pt/PZT/Pt capacitor which lost more than 50% of its original remnant polarization.