Chemical solution processing and characterization of Ba(Zr,Ti)O3/LaNiO3 layered thin films

Ba(Zr,Ti)O3/LaNiO3 layered thin films have been synthesized by chemical solution deposition (CSD) using metal-organic precursor solutions. Ba(Zr,Ti)O3 thin films with smooth surface morphology and excellent dielectric properties were prepared on Pt/TiOx/SiO2/Si substrates by controlling the Zr/Ti ratios in Ba(Zr,Ti)O3. Chemically derived LaNiO3 thin films crystallized into the perovskite single phase and their conductivity was sufficiently high as a thin-film electrode. Ba(Zr,Ti)O3/LaNiO3 layered thin films of single phase perovskite were fabricated on SiO2/Si and fused silica substrates. The dielectric constant of a Ba(Zr0.2Ti0.8)O3 thin film prepared at 700°C on a LaNiO3/fused silica substrate was found to be approximately 830 with a dielectric loss of 5% at 1 kHz and room temperature. Although the Ba(Zr0.2Ti0.8)O3 thin film on the LaNiO3/fused silica substrate showed a smaller dielectric constant than the Ba(Zr0.2Ti0.8)O3 thin film on Pt/TiOx/SiO2/Si, small temperature dependence of dielectric constant was achieved over a wide temperature range. Furthermore, the fabrication of the Ba(Zr,Ti)O3/LaNiO3 films in alternate thin layers similar to a multilayer capacitor structure was performed by the same solution deposition process.