Broadband Doherty-Outphasing RF Power Amplifier for S-Band

被引：0

作者：

Chen, Yi ^{[1
]}

Cheng, Zhiqun ^{[1
]}

Zhu, Yichao ^{[1
]}

Liu, Guohua ^{[1
]}

机构：

[1] Hangzhou Dianzi Univ, Sch Elect & Informat, Hangzhou, Peoples R China

来源：

2019 8TH INTERNATIONAL SYMPOSIUM ON NEXT GENERATION ELECTRONICS (ISNE) | 2019年

基金：

中国国家自然科学基金;

关键词：

Outphasing; Power Amplifier; Low-pass Matching Network; Doherty; Broadband; High Efficiency;

D O I：

10.1109/isne.2019.8896381

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper introduces a broadband S-band outphasing power amplifier. The low-pass matching network is applied for both the post-matching structure of Doherty power amplifier(PA) and the phase compensation of combiner to achieve high drain efficiency at saturation and power back-off in a wide frequency range. The design was simulated using Cree's GaN HEMT CGH40010F transistor. The results of the proposed outphasing PA shows that the drain efficiency is higher than 63% within a 46.5dBm saturated output power and the 6dB power back-off drain efficiency is 45%-50% in 3.0-3.8 GHz.

引用

页数：3

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