Effect of Se Isoelectronic Impurity on the Luminescence Features of the ZnO

被引：8
|
作者：
Khomyak, V. [1 ]
Slyotov, M. [1 ]
Shtepliuk, I. [2 ]
Slyotov, O. [1 ]
Kosolovskiy, V. [1 ]
机构：
[1] Yu Fedkovich Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine
[2] NASU, Frantsevich Inst Problems Mat Sci, UA-03680 Kiev 142, Ukraine
来源：
ACTA PHYSICA POLONICA A | 2012年 / 122卷 / 06期
关键词：
BINDING;
D O I：
10.12693/APhysPolA.122.1039
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Se-doped ZnO films have been deposited on the sapphire substrates by the radio-frequency magnetron sputtering technique. An influence of the isoelectronic impurity Se on the room-temperature luminescence of the ZnO films is studied. It is revealed that the Se doping leads to an appearance of the intense near-band edge emission spectrum, which consists of three emission bands. The dominant emission band is related to the recombination of the bound excitons. The radiation caused by the band-to-band transitions of free carriers is observed in the high-energy side of the spectrum ((h) over bar omega > E-g).
引用
收藏
页码：1039 / 1041
页数：3
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