Optical Transparency and Surface Recombination Considerations for High Sheet Resistance Emitter Passivation on Silicon Solar Cells

被引：0

作者：

Yamanaka, Satoshi ^{[1
]}

Gumon, Nicholas ^{[1
]}

Dybiec, Maciej ^{[1
]}

Mueller, Guenther ^{[1
]}

Kopp, Bradley ^{[1
]}

Good, Ethan ^{[1
]}

机构：

[1] SolarWorld, Hillsboro, OR 97124 USA

来源：

2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2012年

关键词：

emitter; high sheet resistivity; optical modeling; passivation; silicon oxide; silicon solar cell;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The optical impacts of thin SiO2 passivation layer on industrial Si solar cells are modeled. The modeling shows that negligible optical loss results from SiO2 of <18 nm thickness in combination with an adjusted thickness of conventional SiNx anti-reflective coating. Thermally-grown SiO2 was applied as the front surface passivation of industrial Si solar cells with high sheet-resistivity (115 Omega/sq) emitter. Considerable improvement was observed in effective minority carrier lifetime, and 9 mV of Voc and 0.1% ( absolute) of cell efficiency gains have been attained with similar to 18 nm thick SiO2 grown at 850 degrees C over the industrial-type reference cells.

引用

页码：1166 / 1171

页数：6

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