Effect of an in-situ thermal annealing on the structural properties of self-assembled GaSb/GaAs quantum dots

被引：4

作者：

Fernandez-Delgado, N. ^{[1
]}

Herrera, M. ^{[1
]}

Chisholm, M. F. ^{[2
]}

Kamarudin, M. A. ^{[3
,4
]}

Zhuang, Q. D. ^{[3
]}

Hayne, M. ^{[3
]}

Molina, S. I. ^{[1
]}

机构：

[1] Univ Cadiz, Dept Mat Sci Met Engn & Inorgan Chem, IMEYMAT, Cadiz 11510, Spain

[2] Oak Ridge Natl Lab, Scanning Transmiss Electron Microscopy Grp, Oak Ridge, TN USA

[3] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

[4] Univ Putra Malaysia, Fac Sci, Dept Phys, Upm Serdang 43400, Selangor, Malaysia

来源：

APPLIED SURFACE SCIENCE | 2017年 / 395卷

关键词：

GaSb; Quantum dot; Scanning transmission electron microscopy; Thermal annealing;

D O I：

10.1016/j.apsusc.2016.04.131

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this work, the effect of the application of a thermal annealing on the structural properties of GaSb/GaAs quantum dots (QDs)(1) is analyzed by aberration corrected high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM)(2) and electron energy loss spectroscopy (EELS)(1) Our results show that the GaSb/GaAs QDs are more elongated after the annealing, and that the interfaces are less abrupt due to the Sb diffusion. We have also found a strong reduction in the misfit dislocation density with the annealing. The analysis by EELS of a threading dislocation has shown that the dislocation core is rich in Sb. In addition, the region of the GaAs substrate delimited by the threading dislocation is shown to be Sb-rich as well. An enhanced diffusion of Sb due to a mechanism assisted by the dislocation movement is discussed. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：136 / 139

页数：4

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