Fluorinated amorphous carbon: A low dielectric constant material for multilevel interconnect applications.

被引：0
|
作者：
Zhu, W [1 ]
Pai, CS [1 ]
Bair, HE [1 ]
Krautter, HW [1 ]
Dennis, BS [1 ]
机构：
[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
来源：
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY | 1999年 / 218卷
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
93-PMSE
引用
收藏
页码：U629 / U629
页数：1
相关论文
共 50 条
  • [21] Electrical properties of plasma deposited low-dielectric-constant fluorinated amorphous carbon films
    Wu Zhenyu
    Yang Yintang
    Wang Jiayou
    PLASMA SCIENCE & TECHNOLOGY, 2006, 8 (06) : 724 - 726
  • [22] Electrical Properties of Plasma Deposited Low-Dielectric-Constant Fluorinated Amorphous Carbon Films
    吴振宇
    杨银堂
    汪家友
    Plasma Science and Technology, 2006, 8 (06) : 724 - 726
  • [23] Spectroscopic studies of low dielectric constant fluorinated amorphous carbon films for ulsi integrated circuits
    Ma, YJ
    Yang, HN
    Guo, J
    Sathe, C
    Agui, A
    Nordgren, J
    APPLICATIONS OF SYNCHROTRON RADIATION TECHNIQUES TO MATERIALS SCIENCE IV, 1998, 524 : 169 - 178
  • [24] Synthesis and characterization of fluorinated polybenzoxazine material with low dielectric constant
    Su, YC
    Chang, FC
    POLYMER, 2003, 44 (26) : 7989 - 7996
  • [25] Controlling fluorine concentration of fluorinated amorphous carbon thin films for low dielectric constant interlayer dielectrics
    Endo, K
    Tatsumi, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (11B): : L1531 - L1533
  • [26] Changes in structure and nature of defects by annealing of fluorinated amorphous carbon thin films with low dielectric constant
    Yokomichi, H
    Hayashi, T
    Masuda, A
    APPLIED PHYSICS LETTERS, 1998, 72 (21) : 2704 - 2706
  • [27] Controlling fluorine concentration of fluorinated amorphous carbon thin films for low dielectric constant interlayer dielectrics
    Endo, Kazuhiko
    Tatsumi, Toru
    Japanese Journal of Applied Physics, Part 2: Letters, 1997, 36 (11 B):
  • [28] Effect of CF4 plasma treatment on fluorinated amorphous carbon films with a low dielectric constant
    Ko, Ho Jeong
    Lee, Heon Ju
    Lee, Kwang-Man
    Choi, Chi Kyn
    JOURNAL OF CERAMIC PROCESSING RESEARCH, 2006, 7 (02): : 172 - 176
  • [29] A manufacturable embedded fluorinated SiO2 for advanced 0.25 μm CMOS VLSI multilevel interconnect applications.
    Pai, CS
    Velaga, AN
    Lindenberger, WS
    Lai, WYC
    Cheung, KP
    Baumann, FH
    Chang, CP
    Liu, CT
    Liu, R
    Diodato, PW
    Colonell, JI
    Vaidya, H
    Vitkavage, SC
    Clemens, JT
    Tsubokura, F
    PROCEEDINGS OF THE IEEE 1998 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 1998, : 39 - 41
  • [30] The study of fluorinated amorphous carbon as low-k dielectric material and its interface with copper metallization
    Ariel, N
    Eizenberg, M
    Tzou, EY
    ADVANCED INTERCONNECTS AND CONTACTS, 1999, 564 : 565 - 570
12345