Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application

被引：42
|
作者：
Song, Jeonghwan [1 ]
Prakash, Amit [1 ]
Lee, Daeseok [1 ]
Woo, Jiyong [1 ]
Cha, Euijun [1 ]
Lee, Sangheon [1 ]
Hwang, Hyunsang [1 ]
机构：
[1] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 790784, South Korea
来源：
APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 11期
关键词：
CUPROUS-OXIDE; RADICAL OXIDATION; RESISTANCE;
D O I：
10.1063/1.4931136
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this study, we achieved bidirectional threshold switching (TS) for selector applications in a Ag-Cu2O-based programmable-metallization-cell device by engineering the stack wherein Ag was intentionally incorporated in the oxide (Cu2O) layer by a simple approach comprising co-sputtering and subsequent optimized annealing. The distribution of the Ag was directly confirmed by transmission electron microscopy and energy dispersive spectroscopy line profiling. The observed TS occurred because of the spontaneous self-rupturing of the unstable Ag filament that formed in the oxide layer. (C) 2015 AIP Publishing LLC.
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页数：4
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