The band alignment of Cu2O/ZnO and Cu2O/GaN heterostructures

被引：95
|
作者：
Kramm, B. [1 ]
Laufer, A. [1 ]
Reppin, D. [1 ]
Kronenberger, A. [1 ]
Hering, P. [1 ]
Polity, A. [1 ]
Meyer, B. K. [1 ]
机构：
[1] Univ Giessen, Inst Phys 1, D-35392 Giessen, Germany
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 09期
关键词：
conduction bands; copper compounds; gallium compounds; III-V semiconductors; II-VI semiconductors; photoelectron spectra; semiconductor heterojunctions; solar cells; valence bands; wide band gap semiconductors; zinc compounds; I-N HETEROJUNCTION; SOLAR-CELLS; FILM DEPOSITION; ZNO; SPECTROSCOPY; CONDUCTION; DEVICE; OFFSET; LEVEL;
D O I：
10.1063/1.3685719
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Using photoelectron spectroscopy, we investigate the band alignments of the Cu2O/ZnO heterointerface and compare the findings with the corresponding values for Cu2O/GaN. While for Cu2O/ZnO, we find a valence band offset (VBO) of 2.17 eV and a conduction band offset (CBO) of 0.97 eV, both values are considerably reduced for Cu2O/GaN where the numbers are 1.47 eV (VBO) and 0.24 eV (CBO), respectively. The large CBO between ZnO and Cu2O will very likely result in low photovoltaic power conversion efficiencies as is the current status of Cu2O/ZnO solar cells. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3685719]
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页数：3
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