Short channel effects and subthreshold operation in single and double gate deep submicron SOI MOSFETS

The subthreshold operation (subthreshold swing and leakage current) and the short channel effects (DIBL and charge sharing) are investigated in partially and fully depleted deep submicron N-channel SOI-MOSFETs by numerical simulation and experimental results. The use of extremely thin silicon films in single gate SOI-MOSFETs is shown to substantially improve the overall behaviors. Furthermore, a double gate control in thin film SOI-MOSFETs leads to an ideal subthreshold swing in a large range of drain bias together with optimum short channel effects. The influence of the Si film doping on the swing and the short channel effects is also pointed out.