Influence of dynamic switching on the robustness of power devices against cosmic radiation

被引：0

作者：

Haertl, Andreas ^{[1
]}

Soelkner, Gerald ^{[1
]}

Pfirsch, Frank ^{[1
]}

Brekel, Waleri ^{[2
]}

Duetemeyer, Thomas ^{[2
]}

机构：

[1] Infineon Technol AG, D-85579 Neubiberg, Germany

[2] Infineon Technol AG, D-59581 Warstein, Germany

来源：

2012 24TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2012年

关键词：

cosmic radiation; power devices; IGBT; robustness; ELECTRONIC DEVICES; DIODES;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

For the first time, experiments and simulations for testing the influence of dynamic switching on the robustness of power devices against cosmic radiation are presented. Irradiation experiments of switching high power modules are performed, using pulsed proton or neutron beams. Thereby, the switching frequency of the power modules is synchronized to the extraction frequency of particle beam pulses from the synchrotron. With this new experimental approach both 6.5kV IGBTs and free-wheeling diodes are studied under various switching conditions. Employing these experiments and also simulations based on semi-empirical models, we find a non-negligible contribution of these dynamic effects on the failure rate of high power devices induced by high-energy nucleon irradiation.

引用

页码：353 / 356

页数：4

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