Structure and electronic properties of 4-6-12 graphene layers functionalized by fluorine

被引:3
|
作者
Belenkov, M. E. [1 ]
Chernov, V. M. [1 ]
机构
[1] Chelyabinsk State Univ, 129 Bratiev Kashirinykh St, Chelyabinsk 454001, Russia
来源
LETTERS ON MATERIALS | 2020年 / 10卷 / 03期
关键词
graphene; fluorographene; crystal structure; electronic properties; ab initio calculations; PHONON STATES; DENSITY; APPROXIMATION; VELOCITIES; SOUND;
D O I
10.22226/2410-3535-2020-3-254-259
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This article presents the results of theoretical studies of new polymorphic varieties of fluorographene, which can be formed on the basis of L4-6-12 graphene layers. The calculations of the geometrically optimized structure, band structure, and density of electronic states were performed by the density functional theory method in the generalized gradient approximation. As a result of the theoretical analysis, it was established that three basic structural types of CF layers - T1, T2, and T3 - can be formed, which differ by the order of fluorine atom attachments. In these polymorphic varieties, all carbon atoms are in equivalent structural positions. When calculating the optimized structure of CF polymorphs, it was found that only T1 and T3 varieties have a stable structure. The structure of T2 type layers collapsed during the optimization. The crystal lattices of CF-L4-6-12-T1 and CF-L4-6-12-T3 are hexagonal, with 24 atoms in each of their unit cells. The layer density of the fluorographene layers is 1.42 and 1.52 mg/m(2) for T1 and T2 types, respectively. The carbon-carbon bonds in the structure of the layers have different lengths and vary from 1.5157 to 1.6602 angstrom. The reason for this is the different number of electron pairs forming the corresponding covalent bond. The angles between bonds in CF layers vary over the wide range from 85.00 degrees to 133.47 degrees, which is caused by deformation of the layer structure in comparison with the diamond structure. The sublimation energy of the Ti type fluorographene layer is 13.84 eV/(CF), and the T3 layer is 13.80 eV/(CF). Fluorographene polymorphs are semiconductors with the band gap of 3.193 eV for the CF-L4-6-12-T1 layer and 4.150 eV for the CF-L4-6-12-T3 layer.
引用
收藏
页码:254 / 259
页数:6
相关论文
共 50 条
  • [21] Electronic properties of metal-arene functionalized graphene
    Plachinda, Paul
    Evans, David R.
    Solanki, Raj
    JOURNAL OF CHEMICAL PHYSICS, 2011, 135 (04):
  • [22] The ground state of the spin-1/2 Heisenberg antiferromagnet on an Archimedean 4-6-12 lattice
    Tomczak, P
    Schulenburg, J
    Richter, J
    Ferchmin, AR
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (17) : 3851 - 3857
  • [23] Structure, Stability, and Electronic Interactions of Polyoxometalates on Functionalized Graphene Sheets
    Tessonnier, Jean-Philippe
    Goubert-Renaudin, Stephanie
    Alia, Shaun
    Yan, Yushan
    Barteau, Mark A.
    LANGMUIR, 2013, 29 (01) : 393 - 402
  • [24] Electronic structure of oxygen-functionalized armchair graphene nanoribbons
    Simbeck, Adam J.
    Gu, Deyang
    Kharche, Neerav
    Satyam, Parlapalli Venkata
    Avouris, Phaedon
    Nayak, Saroj K.
    PHYSICAL REVIEW B, 2013, 88 (03):
  • [25] Local electronic and electrical properties of functionalized graphene nano flakes
    Chutia, Arunabhiram
    Sahnoun, Riadh
    Deka, Ramesh C.
    Zhu, Zhigang
    Tsuboi, Hideyuki
    Takaba, Hiromitsu
    Miyamoto, Akira
    PHYSICA B-CONDENSED MATTER, 2011, 406 (09) : 1665 - 1672
  • [26] Spectroscopic and electronic properties of polyallylamine functionalized graphene oxide films
    Saini, Pooja
    Singh, Manjri
    Singh, Surinder P.
    Mahapatro, Ajit K.
    VACUUM, 2018, 154 : 110 - 114
  • [27] Electronic properties of edge functionalized S-graphene nanoribbons
    Majidi, Roya
    SOLID STATE COMMUNICATIONS, 2021, 330
  • [28] Synthesis and electronic properties of chemically functionalized graphene on metal surfaces
    Grueneis, Alexander
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2013, 25 (04)
  • [29] Electronic structure of epitaxial graphene layers on SiC: Effect of the substrate
    Varchon, F.
    Feng, R.
    Hass, J.
    Li, X.
    Nguyen, B. Ngoc
    Naud, C.
    Mallet, P.
    Veuillen, J.-Y.
    Berger, C.
    Conrad, E. H.
    Magaud, L.
    PHYSICAL REVIEW LETTERS, 2007, 99 (12)
  • [30] Superstructures in arrays of rotated graphene layers: Electronic structure calculations
    Cisternas, Eduardo
    Flores, Marcos
    Vargas, Patricio
    PHYSICAL REVIEW B, 2008, 78 (12):