Carbon nanocluster growth inside micropipes during the SiC bulk growth process

被引：2

作者：

Zhokhov, A. A. ^{[1
]}

Aronin, A. S. ^{[1
]}

Yakimov, E. B. ^{[2
]}

Melchenko, G. A. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia

[2] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow District, Russia

来源：

MATERIALS RESEARCH EXPRESS | 2014年 / 1卷 / 02期

关键词：

SiC; single crystal; sublimation growth; micropipes; C-clusters; SINGLE-CRYSTAL;

D O I：

10.1088/2053-1591/1/2/025038

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Carbon nanocluster growth inside micropipes has been discovered during the SiC bulk growth process under near-equilibrium conditions. Measurements have been made of the morphology and structure of the carbon crystallites. An isobaric cross-section of the Si-C phase diagram and an isothermal cross-section of the triple Si-C-Ar system have been built. The C-cluster nucleation and growth conditions have been analyzed using a phase diagram.

引用

页数：6

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