Carbon nanocluster growth inside micropipes during the SiC bulk growth process

被引：2
|
作者：
Zhokhov, A. A. [1 ]
Aronin, A. S. [1 ]
Yakimov, E. B. [2 ]
Melchenko, G. A. [1 ]
机构：
[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia
[2] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow District, Russia
来源：
MATERIALS RESEARCH EXPRESS | 2014年 / 1卷 / 02期
关键词：
SiC; single crystal; sublimation growth; micropipes; C-clusters; SINGLE-CRYSTAL;
D O I：
10.1088/2053-1591/1/2/025038
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Carbon nanocluster growth inside micropipes has been discovered during the SiC bulk growth process under near-equilibrium conditions. Measurements have been made of the morphology and structure of the carbon crystallites. An isobaric cross-section of the Si-C phase diagram and an isothermal cross-section of the triple Si-C-Ar system have been built. The C-cluster nucleation and growth conditions have been analyzed using a phase diagram.
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页数：6
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