Wideband Filters on High-Resistivity Silicon Substrate for 5G High-Frequency Applications

被引：0

作者：

Wu, Lin-Sheng ^{[1
]}

Mao, Jun-Fa ^{[1
]}

Hou, Fang ^{[2
]}

Zhu, Jian ^{[2
]}

机构：

[1] Shanghai Jiao Tong Univ, Key Lab, Minist Educ Design & EMC High Speed Elect Syst, Shanghai, Peoples R China

[2] Nanjing Elect Device Inst, CETC55, Nanjing, Jiangsu, Peoples R China

来源：

2017 IEEE ELECTRICAL DESIGN OF ADVANCED PACKAGING AND SYSTEMS SYMPOSIUM (EDAPS) | 2017年

基金：

中国国家自然科学基金;

关键词：

5G; bandpass filter; commensurate-line network; high-resistivity silicon substrate; substrate integrated waveguide (SIW);

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In order to satisfy the requirements on high traffic capacity and high data rate of 5G wireless communications, two wideband RF filters are developed on high-resistivity silicon substrate with MEMS technology for high-frequency base-station applications. A commensurate-line filter is designed for 9 to 15 GHz, with measured in-band insertion loss of 0.8 dB and return loss of 14 dB. A substrate integrated waveguide filter is designed for 25 to 30 GHz. The simulated results satisfy the specifications and the measured ones degrade mainly due to the fabrication of bilayer topology, which will be solved in the near future. Both of them are with compact size and good frequency selectivity.

引用

页数：3

共 50 条

[21] D-Band Characterization of a Commercial High-Resistivity Silicon Calibration Substrate
Gia Ngoc Phung
Koot, Hyunji
Cho, Chihyun
Kwon, Jae-Yong
Arz, Uwe
2023 101ST ARFTG MICROWAVE MEASUREMENT CONFERENCE, ARFTG, 2023,
[22] Microwave noise characteristics of AlGaN/GaN HEMTs on high-resistivity silicon substrate
Liu, Z. H.
Arulkumaran, S.
Ng, G. I.
Cheong, W. C.
Zeng, R.
Bu, J.
Wang, H.
Radhakrishnan, K.
Tan, C. H.
2005 IEEE INTERNATIONAL WORKSHOP ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY, PROCEEDINGS: INTEGRATED CIRCUITS FOR WIDEBAND COMMUNICATION AND WIRELESS SENSOR NETWORKS, 2005, : 127 - 130
[23] High-resistivity polycrystalline silicon as RF substrate in wafer-level packaging
Polyakov, A
Sinaga, S
Mendes, PM
Bartek, M
Correia, JH
Burghartz, JN
ELECTRONICS LETTERS, 2005, 41 (02) : 100 - 101
[24] Metastable hole traps in high-resistivity silicon
Avset, BS
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (03) : 284 - 290
[25] CHARACTERIZATION OF HIGH-RESISTIVITY SILICON BY HALL MEASUREMENTS
BARON, R
YOUNG, MH
NEELAND, JK
MARSH, OJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : C113 - C113
[26] FABRICATION OF DETECTORS AND TRANSISTORS ON HIGH-RESISTIVITY SILICON
HOLLAND, S
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1989, 275 (03): : 537 - 541
[27] HIGH-TEMPERATURE DRIFT MOBILITIES IN HIGH-RESISTIVITY SILICON
CASELLI, E
CABANILLAS, R
WAINSCHENKER, R
CUTELLA, M
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 98 (02): : K179 - K183
[28] Horizontal Integration of Cavity Filters on High-Resistivity Silicon Thin-Film Technology
Quijano, Guillermo Posada
Carchon, Geert J.
Nauwelaers, Bart K. J. C.
de Raedt, Walter
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2008, 56 (12) : 2893 - 2901
[29] JFET FOR COMPLETELY DEPLETED HIGH-RESISTIVITY SILICON
RADEKA, V
REHAK, P
RESCIA, S
GATTI, E
LONGONI, A
SAMPIETRO, M
BERTUCCIO, G
HOLL, P
STRUDER, L
KEMMER, J
JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 363 - 366
[30] Electrical losses in high-resistivity silicon with deep
Pribylov, NN
Pribylova, EI
SEMICONDUCTORS, 1996, 30 (04) : 344 - 346

← 1 2 3 4 5 →