Silicon doped boron carbide nanorod growth via a solid-liquid-solid process

Here we report the synthesis of silicon doped boron carbide (Si-doped B4C) nanorods via a solid reaction using activated carbon, boron, and silicon powder as reactants. These nanorods have been studied by high-resolution transmission electron microscopy, scanning electron microscopy, electron energy loss spectroscopy, and energy-dispersive x-ray spectrometry. The diameter of Si-doped B4C nanorods ranges from 15 to 70 nm. The length of Si-doped B4C nanorods is up to 30 mu m. NixCoyBz nanoparticles are used as catalysts for the growth of Si-doped B4C nanorods. A solid-liquid-solid growth mechanism is proposed.