The formation of new periodicities after N-implantation in 4H-and 6H-SiC samples

被引：0
|
作者：
Zekentes, Konstantinos [1 ]
Tsagaraki, Katerina [1 ]
Breza, Aikaterini [2 ]
Frangis, Nikolaos [2 ]
机构：
[1] MRG IESL FORTH, POB 1385 Heraklion, Vassilika Vouton, Greece
[2] Aristotle Univ Thessaloniki, Dept Phys, Thessaloniki 54124, Greece
来源：
SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷
关键词：
Ion implantation; X-Ray Diffraction; Transmission Electron Microscopy;
D O I：
10.4028/www.scientific.net/MSF.740-742.447
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The purpose of the present study is to study the crystal periodicities that appear in 4H-and 6H-SiC material after the implantation with nitrogen and prior to post-implantation annealing. High Resolution X-Ray diffraction (HRXRD) and Transmission Electron Microscopy (TEM) have been employed towards this purpose. Extra peaks at smaller, than the main (00n) peak, diffraction angles in HRXRD scans and extra spots in the electron diffraction patterns have been observed due to the presence of these periodicities. Higher lattice constant periodic structures are apparently formed from the implanted nitrogen ions located at interstitial sites and disappear after the annealing and the resulting positioning of nitrogen atoms in substitutional sites.
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页码：447 / +
页数：2
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