Fabrication and Characterization of a GaN-Based 320x256 Micro-LED Array

Design, fabrication and characterizations of GaN-based blue micro light emitting diode (LED) arrays are reported. The GaN micro-LED array consists of 320 x 256 pixels with a pitch size of 30 mu m. Each pixel is 25 x 25 mu m(2) in size, which is designed for backside emission and high density flip-chip packaging. The selected LED pixels being tested exhibit good uniformity in terms of turn-on voltage and reverse leakage current. The efficiency droop behavior and reliability behavior under high forward current stress are also studied. The micro-LED pixel shows improved reliability, which is likely caused by enhanced heat dissipation.