Investigation of magnetism in Fe and Cu ion implanted indium oxide films

被引：5
|
作者：
Wang, J. W. [1 ]
Chen, Y. X. [2 ]
Shi, Y. [1 ]
机构：
[1] Wuhan Univ, Sch Phys & Technol, Minist Educ, Key Lab Artificial Micro & Nanostruct, Wuhan 420072, Peoples R China
[2] Shandong Univ, Sch Phys & Microelect, Natl Key Lab Crystal Mat, Jinan 250100, Peoples R China
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2013年 / 307卷
基金：
中国国家自然科学基金;
关键词：
In2O3; film; Ion implantation; Diluted magnetic semiconductor (DMS); Room temperature ferromagnetism; ROOM-TEMPERATURE FERROMAGNETISM; DOPED IN2O3; SEMICONDUCTORS;
D O I：
10.1016/j.nimb.2013.01.015
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Diluted magnetic semiconductor based on indium oxide has been prepared by transition metal ion implantation. Fe and Cu ions have been implanted into pulsed laser deposition prepared pure In2O3 films by metal vapor vacuum arc source with doses from 5 x 10(15) cm(-2) to 1 x 10(17) cm(-2), respectively. The implanted samples are annealed in the air subsequently. The structure of In2O3 films is characterized by X-ray diffraction. X-ray photoelectron spectroscopy measurements are applied to confirm the electronic state of the implanted ions. Superconducting quantum interference device measurements at room temperature disclose that the diamagnetic In2O3 films turned to be ferromagnetic after Fe and Cu ion implantation. The correlation between ferromagnetism and implantation conditions is tested. The ferromagnetism is attributed to the bound magnetic polarons formed by Fe, Cu ion implantation. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：391 / 393
页数：3
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