Degradation in TDDB of Cu/Low-k Test Structures Due to Field Interaction Between Adjacent Metal Lines

被引：0
|
作者：
Ong, R. X. [1 ,2 ]
Gan, C. L. [1 ]
Ong, R. X. [1 ,2 ]
Tan, T. L. [2 ]
机构：
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[2] GLOBALFOUNDRIES Singapore PTE LTD, Singapore, Singapore
来源：
2013 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2013年
关键词：
TDDB; BEOL; Low-k; Electric field interaction;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, small area test structures were used to study the effect of field interaction between neighboring fingers of the test structures. Time dependent dielectric breakdown tests were performed on the test structures. It was determined that the electric field between adjacent fingers, and not only the electric field between the cathode and anode, has an impact on the breakdown lifetime of the low-k dielectric.
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页数：4
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