GaAs-based high power diode laser

被引：0

作者：

Gu, Yuanyuan ^{[1
]}

Wu, Guoxing ^{[1
]}

HuiLu ^{[1
]}

Cui, Yan ^{[1
]}

机构：

[1] Shanghai Normal Univ, Tianhua Coll, Sect Practice & Training, Shanghai 201815, Peoples R China

来源：

MATERIALS PROCESSING TECHNOLOGY II, PTS 1-4 | 2012年 / 538-541卷

关键词：

GaAs; diode laser; high efficiency; high brightness; coupling technology;

D O I：

10.4028/www.scientific.net/AMR.538-541.1852

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-power diode lasers based on GaAs semiconductor bars are well established as reliable and highly efficient laser sources. The device structure and stack technology of edge-emitting diode laser were presented briefly as well as the development of electro-optical conversion efficiency,lifetime, power.The technology of ten-thousand watt level high power diode laser was introduced as a new generation of laser processing equipment. In order to output high power, we utilized polarization coupling technology to couple two 808nm and 880nm laser diode stack together, and designed the optical system to expand and focus the beam, through the experiment; we realize the overall efficiency more than 90%, power output 1000W.

引用

页码：1852 / 1856

页数：5

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