Effect of film thickness on properties of Al-doped ZnO film as transparent conducting electrodes in OLEDs

被引：0

作者：

Li, Yuan-dong ^{[1
]}

Wang, De-miao ^{[1
]}

Jin, Hao ^{[1
]}

Lu, Jing-ping ^{[1
]}

Zhou, Jian ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Informat Sci & Elect Engn, Hangzhou 310027, Peoples R China

来源：

2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) | 2012年

关键词：

sputtering; conducting films; AZO; TCO; transparent; OLED;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Al-doped ZnO (AZO) thin film is a promising alternative to an ITO electrode in organic light-emitting diodes applications due to its low price, non-toxicity and other promising properties. In this paper, AZO thin films of different thicknesses were deposited on glass substrates as transparent conducting films by sputtering. The effect of film thickness on the structural, electrical and optical properties of AZO films were investigated. Results show that with the increase of film thickness, the electrical conductivity increase but the optical transmittance decrease. The optimum properties were obtained in 874 nm film, which exhibited an excellent figure of merit (27.8 x 10(-3)Omega(-1)) with transmittance of 84.4% and resistance of 5.72 x 10(-4)Omega cm .

引用

页码：1629 / 1631

页数：3

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