Pizeoelectric epitaxial sol-gel Pb(Zr0.52Ti0.48)O3 film on Si(001)

被引：0

作者：

Yin, S. ^{[1
]}

Le Rhun, G. ^{[1
]}

Defay, E. ^{[1
]}

Vilquin, B. ^{[2
]}

Niu, G. ^{[2
]}

Robach, Y. ^{[2
]}

Dragoi, C. ^{[3
]}

Trupina, L. ^{[3
]}

Pintilie, L. ^{[3
]}

机构：

[1] DCOS LCMA Dept, CEA LETI Minatec Campus, F-38054 Grenoble, France

[2] Ecole Centrale Lyon, Inst Nanotechnol Lyon, F-69134 Ecully, France

[3] Natl Inst Mat Phys, Magurele, Bucuresti, Romania

来源：

2012 INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS HELD JOINTLY WITH 11TH IEEE ECAPD AND IEEE PFM (ISAF/ECAPD/PFM) | 2012年

关键词：

PZT; STO; SRO; Sol-gel; PLD; MBE; Epitaxy; single crystal; piezoelectricity; PULSED-LASER DEPOSITION; THIN-FILMS; O HETEROSTRUCTURES; FATIGUE; SILICON; SRTIO3; SRRUO3;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial Pb(Zr0.52Ti0.48)O-3 (PZT) thin film has been successfully integrated on Si(001) substrate by sol-gel method. SrTiO3 (STO) layer deposited on Si by Molecular Beam Epitaxy (MBE) acts as a template layer in this study to avoid the formation of amorphous SiO2, and allows the chemical compatibility for further epitaxial growth. For bottom electrode, SrRuO3 (SRO) layer grown by Pulsed Laser Deposition (PLD) on STO/Si was used. Epitaxial single crystalline growth of PZT film after Rapid Thermal Annealing (RTA) at 650 C was evidenced by X-Ray Diffraction (XRD). The following relationship in the heterostructure was deduced: [110] PZT (001) // [110] SRO (001) // [110] STO (001) // [100] Si (001). A clear piezoelectric response of the film was observed by Piezoresponse Force Microscope (PFM). Moreover, the structural STO quality was proved to have a major impact on the electrical properties of PZT films.

引用

页数：4

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