Patching of Lattice Defects in Two-Dimensional Diffusion Barriers

被引:2
|
作者
Farmer, Damon B. [1 ]
Antunez, Priscilla D. [1 ,2 ]
Hopstaken, Marinus [1 ]
Gunawan, Oki [1 ]
Han, Shu-Jen [1 ]
机构
[1] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
[2] Argonne Natl Lab, Argonne, IL 60439 USA
来源
ACS APPLIED NANO MATERIALS | 2018年 / 1卷 / 07期
关键词
graphene; boron nitride; diffusion barrier; atomic layer deposition; kesterites; CZTSSe; RRAM; resistive switching; ATOMIC LAYER DEPOSITION; COPPER TRANSPORT; GRAPHENE; SILICON;
D O I
10.1021/acsanm.8b00619
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Two-dimensional crystals offer promise as diffusion barriers that can also facilitate electronic conduction through the barrier plane via tunneling. We present barriers in which crystal imperfections are patched, leaving the pristine regions of the crystal exposed and able to both prevent diffusion and allow electronic conduction. This is accomplished by atomic layer deposition, where nucleation of patch material is inhibited on the pristine crystal and promoted elsewhere. Demonstrations of the effectiveness of this technique are performed in the contexts of sulfur diffusion control in photovoltaic kesterite devices and oxygen diffusion control in oxide-based resistive switching devices.
引用
收藏
页码:3068 / 3074
页数:13
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