Weak localization in Al0.5Ga0.5As/GaAs p-type quantum wells

被引：35
|
作者：
Pedersen, S
Sorensen, CB
Kristensen, A
Lindelof, PE
Golub, LE
Averkiev, NS
机构：
[1] Univ Copenhagen, Niels Bohr Inst, DK-2100 Copenhagen, Denmark
[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
PHYSICAL REVIEW B | 1999年 / 60卷 / 07期
关键词：
D O I：
10.1103/PhysRevB.60.4880
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have experimentally investigated the weak-localization magnetoresistance in an Al0.5Ga0.5As/GaAs p-type quantum well. The peculiarity of such systems is that spin-orbit interaction is strong. On the theoretical side it is not possible to treat the spin-orbit interaction as a perturbation. This is in contrast to all prior investigations of weak localization. Tn this paper we compare the experimental results with a newly developed diffusion theory, which explicitly describes the weak-localization regime when the spin-orbit coupling is strong. The spin relaxation rates calculated from the fitting parameters were found to agree with theoretical expectations. Furthermore, the fitting parameters indicate an enhanced phase-breaking rate compared to theoretical predictions. [S0163-1829(99)12927-8].
引用
收藏
页码：4880 / 4882
页数：3
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